Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
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منابع مشابه
Implant isolation of both n-type InP and InGaAs by iron irradiation: Effect of post-implant annealing tem - Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE Int
1 MeV Fe' was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196'C, room temperature (RT), 100°C and 2OO0C to obtain highresistivity regions. The sheet resistivity of the InP and InGaAs epilayers grown on semiinsulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 SOO'C). For InP, a ma...
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